ICs & Dips

4N25 Optocoupler Phototransistor IC DIP-8 Package

17.70
The 4N25 family is an industry standard single channel phototransistor coupler. This family includes the 4N25/4N26/4N27/4N28. Each optocoupler consists of galliumarsenide infrared LED and a silicon NPN phototransistor. These couplers are underwriters laboratories (UL) listed to comply with a 5300 VRMS isolation test voltage. This isolation performance is accomplished through special Vishay manufacturing process. Compliance to DIN EN 60747-5-5 partial discharge isolation

4N28 Optocoupler Phototransistor IC DIP-8 Package

18.88
The 4N28 family is an Industry Standard Single Channel Phototransistor Coupler. This family includes the 4N25, 4N26, 4N27, 4N28. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS isolation test voltage. This isolation performance is accomplished through special Vishay manufacturing process. Compliance to DIN EN 60747-5-2 (VDE 0884)/ DIN EN 60747-5-5 pending partial discharge isolation specification is available by ordering option 1. These isolation processes and the Vishay ISO9001 quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. The devices are also available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers

4N35 IC – Optocoupler Phototransistor IC

17.70
The 4N35 optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. The couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS isolation test voltage. 

4N36 Optocoupler Phototransistor IC DIP-8 Package

18.88
4N36 optocoupler consists of gallium arsenide infrared LED and a silicon NPN photo transistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5000 VRMS isolation test voltage. This isolation performance is accomplished through double molding isolation manufacturing process. Comliance to DIN EN 60747-5-5 partial discharge isolation specification is available for these families by ordering option 1. These isolation processes and the ISO9001 quality program results in the highest isolation performance available for a commecial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.

4N38 Optocoupler Phototransistor IC DIP-8 Package

18.88
4N38 optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor .These couplers are Underwriters Laboratories (UL) listed to comply with a 5000 VRMS isolation test voltage. This isolation performance is accomplished through double molding isolation manufacturing process. Compliance to DIN EN 60747-5-5 partial discharge isolation specification is available for these families by ordering option 1. These isolation processes and the ISO9001 quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler .The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.

62256 32Kx8 bit CMOS Static RAM IC DIP-28 Package

121.54
The 62256 is a high performance CMOS static RAM organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and tristate drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9 percent when deselected. An active LOW write enable signal (WE) controls the writing/reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A14). Reading the device is accomplished by selecting the device and enabling the outputs, CE and OE active LOW, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input/output pins. The input/output pins remain in a high impedance state unless the chip is selected, outputs are enabled, and write enable (WE) is HIGH.

6N135 – High Speed Optocoupler

33.04
The 6N135 is an optocoupler with a GaAIAs infrared emitting diode, optically coupled with an integrated photo detector which consists of a photo diode and a high-speed transistor in a DIP8 plastic package. Signals can be transmitted between two electrically separated circuits up to frequencies of 2 MHz. The potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages.