Showing 349–360 of 418 results
CD54 150uH (151) SMD Power Inductor
CD54 15uH (150) SMD Power Inductor
CD54 1uH (1R0) SMD Power Inductor
CD54 2.2uH (2R2) SMD Power Inductor
FDN304P MOSFET – (SMD SOT-23 Package) – 20V 2.4A P-Channel MOSFET
FDN306P MOSFET – (SMD SOT-23 Package) – 12V 2.6A P-Channel MOSFET
FDN337N MOSFET – (SMD SOT-23 Package) – 30V 2.2A N-Channel Logic Level Enhancement Mode MOSFET
Super SOT-23 N-Channel logic level enhancement mode power field effect transistors are produced using high cell density. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
FDN338P MOSFET – (SMD SOT-23 Package) – 20V 1.6A P-Channel MOSFET
FDN339N MOSFET – (SMD SOT-23 Package) – 20V 3A N-Channel MOSFET
FDN340P MOSFET – (SMD SOT-23 Package) – 20V 2A P-Channel Logic Level MOSFET
This P-Channel Logic Level MOSFET is produced uses advanced low voltage Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and dc-dc conversion.
FDN357P MOSFET – (SMD SOT-23 Package) – 30V 1.9A P-Channel Logic Level Enhancement Mode MOSFET
Super SOT-23 P-Channel logic level enhancement mode power field effect transistors are produced using high cell density. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
FDN358P MOSFET – (SMD SOT-23 Package) – 30V 1.5A P-Channel Logic Level Enhancement Mode MOSFET
Super SOT-23 P-Channel logic level enhancement mode power field effect transistors are produced using high cell density. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
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