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F450 Quadcopter Frame 4-Axis – Integrated PCB Wiring
It is 450mm quad frame built from quality materials. The main frame is glass fiber while the arms are constructed from ultra durable polyamide nylon. This version of the F450 features integrated PCB connections for direct soldering of your ESCs.This eliminates the need for a power distribution board or messy multi-connectors keeping your electronics layout very tidy. F450 also comes with stronger molded arms, so no more arm breakage at the motor mount on a hard landing.
Assembly is a breeze with pre-threaded brass sleeves for all of the frame bolts, so no lock-nuts are required. It utilizes one size of bolt for the entire build, making the hardware very easy to keep in order and only requiring one size of hex wrench to assemble.
FAN7392 High and Low-Side Gate-Drive IC DIP-14 Package
The FAN7392 is a rnonolithic high- and low-sde gate drive IC that can drive high-speed MOSFETs and IGBTs that operate up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. Fairch- ild's high-voltage process and cornnwl-rnode noise can- celing techniques provide stable operation of the high- side driver under high dv/dt noise circumstances. An *Ivanced level-shift circuit offers high-side gate driver operation up to Vs=-9.8V (typical) for VBS=15V. Logic inputs are compatible with standard CMOS or LSTTL output. down to 3.3V logic The I-JVLO circuit prevents malfunction when VCC and VBS are lower than the speci- fied threshold voltage. The high-current and low-output vol* drop feature makes this device suitable for half- and full-bridge inverters, like power Sup- r DC-DC converter applications.
FDN304P MOSFET – (SMD SOT-23 Package) – 20V 2.4A P-Channel MOSFET
FDN306P MOSFET – (SMD SOT-23 Package) – 12V 2.6A P-Channel MOSFET
FDN337N MOSFET – (SMD SOT-23 Package) – 30V 2.2A N-Channel Logic Level Enhancement Mode MOSFET
Super SOT-23 N-Channel logic level enhancement mode power field effect transistors are produced using high cell density. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
FDN338P MOSFET – (SMD SOT-23 Package) – 20V 1.6A P-Channel MOSFET
FDN339N MOSFET – (SMD SOT-23 Package) – 20V 3A N-Channel MOSFET
FDN340P MOSFET – (SMD SOT-23 Package) – 20V 2A P-Channel Logic Level MOSFET
This P-Channel Logic Level MOSFET is produced uses advanced low voltage Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and dc-dc conversion.
FDN357P MOSFET – (SMD SOT-23 Package) – 30V 1.9A P-Channel Logic Level Enhancement Mode MOSFET
Super SOT-23 P-Channel logic level enhancement mode power field effect transistors are produced using high cell density. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
FDN358P MOSFET – (SMD SOT-23 Package) – 30V 1.5A P-Channel Logic Level Enhancement Mode MOSFET
Super SOT-23 P-Channel logic level enhancement mode power field effect transistors are produced using high cell density. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
FDN360P MOSFET – (SMD SOT-23 Package) – 30V 2A P-Channel Logic Level MOSFET
This P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FFC / FPC Adapter Board 1mm to 2.54mm Soldered Connector – 10 pin
This is an FFC / FPC Adapter Board 1mm to 2.54mm Soldered Connector 10 pin. This is useful in terminating the displays and also for supporting board-to-board. The connector is a surface mount, which is ideal for applications where space is a factor. It is ideal for applications where space is a constrain and maneuverability is a necessity like automotive, communications, medical and consumer industries, etc.
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