The IN5822 series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
SKU:
RW-03054
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The IN5822 series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Features:-
? Extremely Low VF
? Low Power Loss/High Efficiency
? Low Stored Charge, Majority Carrier Conduction
? Shipped in plastic bags, 500 per bag
? Available in Tape and Reel, 1500 per reel, by adding a ?RL” suffix to the part number
? Pb-Free Packages are Available
Mechanical Characteristics:-
? Case: Epoxy, Molded
? Weight: 1.1 Gram (Approximately)
? Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
? Lead Temperature for Soldering Purposes: 260?C Max. for 10 Seconds
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