4N36 Optocoupler Phototransistor IC DIP-8 Package

4N36 optocoupler consists of gallium arsenide infrared LED and a silicon NPN photo transistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5000 VRMS isolation test voltage. This isolation performance is accomplished through double molding isolation manufacturing process. Comliance to DIN EN 60747-5-5 partial discharge isolation specification is available for these families by ordering option 1. These isolation processes and the ISO9001 quality program results in the highest isolation performance available for a commecial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.

SKU: RW-02727

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Description

4N36 optocoupler consists of gallium arsenide infrared LED and a silicon NPN photo transistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5000 VRMS isolation test voltage. This isolation performance is accomplished through double molding isolation manufacturing process. Comliance to DIN EN 60747-5-5 partial discharge isolation specification is available for these families by ordering option 1. These isolation processes and the ISO9001 quality program results in the highest isolation performance available for a commecial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.


Features:-

  • Isolation test voltage 5000 VRMS
  • Interfaces with common logic families
  • Input-output coupling capacitance < 0.5 pF
  • Industry standard dual-in-line 6 pin package
  • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC


APPLICATIONS:-

  • AC mains detection
  • Reed relay driving
  • Switch mode power supply feedback
  • Telephone ring detection
  • Logic ground isolation
  • Logic coupling with high frequency noise rejection


AGENCY APPROVALS:-

  • UL file no. E52744 (pending)
  • cUL tested to CSA 22.2 bulletin 5A
  • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
  • (pending), available with option 1
  • BSI: EN 60065, EN 60950-1
  • FIMKO
  • CQC


Specification:-

Symbol Parameter Value Unit
VR Reverse voltage 6 V
IF Forward current 60 mA
IFSM Surge current 2.5 A
Pdiss Power dissipation 70 mW
VCEO Collector-emitter breakdown voltage 70 V
VEBO Emitter-base breakdown voltage 7 V
IC Collector current 50 mA


Package Includes:-

1 x 4N36 Optocoupler Phototransistor IC DIP-8 Package

Additional information

Operating voltage

2.5 3.0V

Pixel Resolution

0.3MP

Photosensitive array

640 x 480

Optical Size

1.6 inch

Angel of view

67 degrees

Maximum Frame Rate

30fps VGA

Sensitivity

1.3V/(Lux-sec)

Dormancy

Less than 20A

Power consumption

60mW/15fpsVGA YUV

Temperature operation Range

-30 C ~ 70 C

Pixel area

3.6 x 3.6 m

Signal to noise ratio (SNR)

46 dB

Dynamic range

52 dB

Specification

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