FDN304P MOSFET – (SMD SOT-23 Package) – 20V 2.4A P-Channel MOSFET

This P-Channel 1.8V specified MOSFET uses advanced low voltage Power Trench process. It has been optimized for battery power management applications.

SKU: RW-01865

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Description

This P-Channel 1.8V specified MOSFET uses advanced low voltage Power Trench process. It has been optimized for battery power management applications.


Features:-

  • -2.4 A, -20 V.

                    RDS(ON) = 52 m @ VGS =   -4.5 V

                    RDS(ON) = 70 m @ VGS =   -2.5 V

                    RDS(ON) = 100 m @ VGS = -1.8 V

  • Fast Switching Speed
  • High Performance Trench Technology for Extremely Low RDS(ON)
  • Super SOT-23 provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT23 in the same Footprint
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant


Applications:-

  • Battery management
  • Load switch
  • Battery protection


Specifications:-

  • Drain-Source Voltage:  -20V
  • Gate-Source Voltage: ?8V
  • Drain Current ? Continuous: -2.4A
  • Drain Current ? Pulsed: -10A
  • Maximum Power Dissipation: 0.5-0.46W
  • Operating and Storage Junction Temperature Range: -55 to +150?C


Package Includes:-

1 x FDN304P MOSFET – (SMD SOT-23 Package) – 20V 2.4A P-Channel MOSFET

Additional information

Operating voltage

2.5 3.0V

Pixel Resolution

0.3MP

Photosensitive array

640 x 480

Optical Size

1.6 inch

Angel of view

67 degrees

Maximum Frame Rate

30fps VGA

Sensitivity

1.3V/(Lux-sec)

Dormancy

Less than 20A

Power consumption

60mW/15fpsVGA YUV

Temperature operation Range

-30 C ~ 70 C

Pixel area

3.6 x 3.6 m

Signal to noise ratio (SNR)

46 dB

Dynamic range

52 dB

Specification

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