The H11F consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.
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The H11F consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.
Features:-
? As a remote variable resistor
? ? 100? to ? 300 M?
? ? 99.9% linearity
? ? 15 pF shunt capacitance
? ? 100 G? I/O isolation resistance As an analog switch
? Extremely low offset voltage
? 60 Vpk-pk signal capability
? No charge injection or latch-up
? ton, toff ? 15 ?S
? UL recognized (File #E90700)
? VDE recognized (File #E94766) ? Ordering option ?300? (e.g. H11F1.300)
Applications:-
? As a variable resistor-
Isolated variable attenuator
Automatic gain control
Active filter fine tuning/band switching
? As an analog switch-
Isolated sample and hold circuit
Multiplexed, optically isolated A/D conversion
Specification:-
| Symbol | Parameter | Value | Unit |
| IF | Forward current | 60 | mA |
| PD | Power dissipation | 100 | mW |
| VR | Reverse Voltage | 5 | V |
| Tstg | Storage temperature range | – 55 to + 150 | ?C |
| TOPR | Operating Temperature | – 55 to + 150 | ?C |
| TSOL | Lead Solder Temperature | 260 for 10 sec | ?C |
| F(pk) | Forward Current – Peak (10 ?s pulse, 1% duty cycle) | 1 | A |
| BV4-6 | Breakdown Voltage (either polarity) | ?30 | V |
Related Document:-
Operating voltage | 2.5 3.0V |
Pixel Resolution | 0.3MP |
Photosensitive array | 640 x 480 |
Optical Size | 1.6 inch |
Angel of view | 67 degrees |
Maximum Frame Rate | 30fps VGA |
Sensitivity | 1.3V/(Lux-sec) |
Dormancy | Less than 20A |
Power consumption | 60mW/15fpsVGA YUV |
Temperature operation Range | -30 C ~ 70 C |
Pixel area | 3.6 x 3.6 m |
Signal to noise ratio (SNR) | 46 dB |
Dynamic range | 52 dB |
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