H11F1 Photo FET Optocoupler IC DIP-6 Package

The H11F consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages. 

Features:-

? As a remote variable resistor 

? ? 100? to ? 300 M? 

? ? 99.9% linearity 

? ? 15 pF shunt capacitance 

? ? 100 G? I/O isolation resistance As an analog switch 

? Extremely low offset voltage 

? 60 Vpk-pk signal capability 

? No charge injection or latch-up 

? ton, toff ? 15 ?S 

? UL recognized (File #E90700) 

? VDE recognized (File #E94766) ? Ordering option ?300? (e.g. H11F1.300)  

Applications:-

? As a variable resistor-

    Isolated variable attenuator 

    Automatic gain control 

    Active filter fine tuning/band switching 

? As an analog switch-

    Isolated sample and hold circuit 

    Multiplexed, optically isolated A/D conversion 

Specification:-

Related Document:-

 H11F1 IC Data Sheet