IRFZ44N MOSFET – 55V 49A N-Channel Power MOSFET TO-220 Package

IRFZ44N is specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

SKU: RW-04532

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Description

IRFZ44N is specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features:-

• Advanced Process Technology

• Ultra Low On-Resistance

• 175°C Operating Temperature

• Fast Switching

• Repetitive Avalanche Allowed up to Tjmax

• Lead-Free, RoHS Compliant

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 55V
Continuous Drain Current (Id) 49A
Drain-Source Resistance (Rds On) 0.0175Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 63 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 94W

Related Documents

 IRFZ44N MOSFET Datasheet 

* Product Images are shown for illustrative purposes only and may differ from actual product.

Additional information

Operating voltage

2.5 3.0V

Pixel Resolution

0.3MP

Photosensitive array

640 x 480

Optical Size

1.6 inch

Angel of view

67 degrees

Maximum Frame Rate

30fps VGA

Sensitivity

1.3V/(Lux-sec)

Dormancy

Less than 20A

Power consumption

60mW/15fpsVGA YUV

Temperature operation Range

-30 C ~ 70 C

Pixel area

3.6 x 3.6 m

Signal to noise ratio (SNR)

46 dB

Dynamic range

52 dB

Specification

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