The CNY74-4 consist of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package. The elements are mounted on one lead frame using a co planar technique, providing a fixed distance between input and output for highest safety requirements.
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The CNY74-4 consist of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package. The elements are mounted on one lead frame using a co planar technique, providing a fixed distance between input and output for highest safety requirements.
Features:-
? CNY74-4 includes 4 isolator channels
? DC isolation test voltage VIO = 2.5 kV
? Test class 25/100/21 DIN 40 045
? Low coupling capacitance of typical 0.3 pF
? Current Transfer Ratio (CTR) of typical 100%
? Low temperature coefficient of CTR
? Wide ambient temperature range
Applications:- Galvanically separated circuits, non-interacting switches.
Specification:-
| Symbol | Parameter | Value | Unit |
| VR | Reverse voltage | 6 | V |
| IF | Forward current | 60 | mA |
| IFSM | Surge current | 1.5 | A |
| PV | Power dissipation | 100 | mW |
| VCEO | Collector-emitter breakdown voltage | 70 | V |
| VEBO | Emitter-base breakdown voltage | 7 | V |
| IC | Collector current | 100 | mA |
| TJ | Junction temperature | 125 | ?C |
| ICM | Peak collector current | 100 | mA |
Related Document:-
Operating voltage | 2.5 3.0V |
Pixel Resolution | 0.3MP |
Photosensitive array | 640 x 480 |
Optical Size | 1.6 inch |
Angel of view | 67 degrees |
Maximum Frame Rate | 30fps VGA |
Sensitivity | 1.3V/(Lux-sec) |
Dormancy | Less than 20A |
Power consumption | 60mW/15fpsVGA YUV |
Temperature operation Range | -30 C ~ 70 C |
Pixel area | 3.6 x 3.6 m |
Signal to noise ratio (SNR) | 46 dB |
Dynamic range | 52 dB |
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