FDN339N MOSFET – (SMD SOT-23 Package) – 20V 3A N-Channel MOSFET

This N-Channel 2.5V specified MOSFET is produced advanced Power Trench process that has been especially tailored to minimize theon-state resistance and yet maintain low gate charge for superior switching performance.

SKU: RW-01861

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Description

This N-Channel 2.5V specified MOSFET is produced advanced Power Trench process that has been especially tailored to minimize theon-state resistance and yet maintain low gate charge for superior switching performance.


Features:-

  • 3 A, 20 V.

                    RDS(ON) = 0.035 ? @ VGS = 4.5V

                    RDS(ON) = 0.050 ? @ VGS = 2.5V

  • Low gate charge (7nC typical)
  • High Performance Trench Technology for Extremely Low RDS(ON)
  • High power and current handling capability


Applications:-

  • DC/DC converter
  • Load switch


Specifications:-

  • Drain-Source Voltage: 20V
  • Gate-Source Voltage: ?8V
  • Drain Current ? Continuous: 3A
  • Drain Current ? Pulsed: 20A
  • Maximum Power Dissipation: 0.5-0.46W
  • Operating and Storage Junction Temperature Range: -55 to +150?C


Package Includes:-

1 x FDN339N MOSFET – (SMD SOT-23 Package) – 20V 3A N-Channel MOSFET

Additional information

Operating voltage

2.5 3.0V

Pixel Resolution

0.3MP

Photosensitive array

640 x 480

Optical Size

1.6 inch

Angel of view

67 degrees

Maximum Frame Rate

30fps VGA

Sensitivity

1.3V/(Lux-sec)

Dormancy

Less than 20A

Power consumption

60mW/15fpsVGA YUV

Temperature operation Range

-30 C ~ 70 C

Pixel area

3.6 x 3.6 m

Signal to noise ratio (SNR)

46 dB

Dynamic range

52 dB

Specification

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