FDN339N MOSFET – (SMD SOT-23 Package) – 20V 3A N-Channel MOSFET
This N-Channel 2.5V specified MOSFET is produced advanced Power Trench process that has been especially tailored to minimize theon-state resistance and yet maintain low gate charge for superior switching performance.
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₹16.52
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Description
This N-Channel 2.5V specified MOSFET is produced advanced Power Trench process that has been especially tailored to minimize theon-state resistance and yet maintain low gate charge for superior switching performance.
Features:-
- 3 A, 20 V.
RDS(ON) = 0.035 ? @ VGS = 4.5V
RDS(ON) = 0.050 ? @ VGS = 2.5V
- Low gate charge (7nC typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High power and current handling capability
Applications:-
- DC/DC converter
- Load switch
Specifications:-
- Drain-Source Voltage: 20V
- Gate-Source Voltage: ?8V
- Drain Current ? Continuous: 3A
- Drain Current ? Pulsed: 20A
- Maximum Power Dissipation: 0.5-0.46W
- Operating and Storage Junction Temperature Range: -55 to +150?C
Package Includes:-
1 x FDN339N MOSFET – (SMD SOT-23 Package) – 20V 3A N-Channel MOSFET
Additional information
Operating voltage | 2.5 3.0V |
Pixel Resolution | 0.3MP |
Photosensitive array | 640 x 480 |
Optical Size | 1.6 inch |
Angel of view | 67 degrees |
Maximum Frame Rate | 30fps VGA |
Sensitivity | 1.3V/(Lux-sec) |
Dormancy | Less than 20A |
Power consumption | 60mW/15fpsVGA YUV |
Temperature operation Range | -30 C ~ 70 C |
Pixel area | 3.6 x 3.6 m |
Signal to noise ratio (SNR) | 46 dB |
Dynamic range | 52 dB |


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