The TLP290-4 consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP290-4 is housed in the SO16 package, very small and thin coupler. Since TLP290-4 are guaranteed wide operating temperature (Ta=-55 to 110 ?C), it?s suitable for high-density surface mounting applications such as programmable controllers and hybrid ICs.
SKU:
RW-02032
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The TLP290-4 consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP290-4 is housed in the SO16 package, very small and thin coupler. Since TLP290-4 are guaranteed wide operating temperature (Ta=-55 to 110 ?C), it?s suitable for high-density surface mounting applications such as programmable controllers and hybrid ICs.
Features:-
? Collector-Emitter Voltage : 80 V (min)
? Current Transfer Ratio : 50% (min) Rank GB : 100% (min)
? Isolation Voltage : 2500 Vrms (min)
? Guaranteed performance over -55 to 110 ?C
? UL (under preparation) : UL1577 , File No. E67349
cUL (under preparation) : CSA Component Acceptance Service No.5A
? BSI (under preparation) : BS EN 60065: 2002,
: BS EN 60950-1: 2006
Specification:-
Symbol
Parameter
Rating
Units
IF(RMS)
Forward Current
?50
mA
?IF / ?C
Forward current derating
?0.67 (Ta?50?C)
mA / ?C
IFP
Pulse forward current
?1
A
Tj
Junction temperature
125
?C
VCEO
Collector-emitter voltage
80
V
VECO
Emitter-collector voltage
7
V
IC
Collector current
50
mA
PC
Collector power dissipation
100
mW
?PC/?C
Collector power dissipation derating (Ta ? 25?C)
?1.0
mW / ?C
Tj
Junction temperature
125
?C
Tstg
Storage temperature range
?55~125
?C
Topr
Operating temperature range
?55~100
?C
Tsol
Lead soldering temperature
260 (10s)
?C
PT
Total package power dissipation
170
mW
?PT / ?C
Total package power dissipation derating (Ta ? 25?C)
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