CNY65B Photo-transistor Output Optocoupler IC DIP-4 Package
The CNY65 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for the highest safety requirements of > 3 mm.
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₹271.40
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Description
The CNY65 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for the highest safety requirements of > 3 mm.
Features:-
? Rated recurring peak voltage (repetitive) VIORM = 1450 Vpeak
? Thickness through insulation 3 mm
? Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI 200
? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Specification:-
| Parameter | Value |
| Package / Case | DIP-4 |
| Length | 17.8 mm |
| Width | 9.6 mm |
| Height | 6.1 mm |
| Collector-Emitter Breakdown Voltage | 32 V |
| Configuration | 1 Channel |
| Current Transfer Ratio | 100 % to 200 % |
| Description/Function | Optocoupler, Phototransistor Output, Very High Isolation Voltage |
| Fall Time | 2.7 us |
| Isolation Voltage | 8200 Vrms |
| Maximum Collector Current | 50 mA |
| Maximum Collector Emitter Saturation Voltage | 0.3 V |
| Maximum Collector Emitter Voltage | 32 V |
| Maximum Operating Temperature | + 85 C |
| Minimum Operating Temperature | – 55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Output Type | NPN Phototransistor |
| Packaging | Tube |
| Pd – Power Dissipation | 250 mW |
| Product Type | Transistor Output Optocouplers |
| Rise Time | 2.4 us |
| Series | CNY |
Related Document:-
Additional information
Operating voltage | 2.5 3.0V |
Pixel Resolution | 0.3MP |
Photosensitive array | 640 x 480 |
Optical Size | 1.6 inch |
Angel of view | 67 degrees |
Maximum Frame Rate | 30fps VGA |
Sensitivity | 1.3V/(Lux-sec) |
Dormancy | Less than 20A |
Power consumption | 60mW/15fpsVGA YUV |
Temperature operation Range | -30 C ~ 70 C |
Pixel area | 3.6 x 3.6 m |
Signal to noise ratio (SNR) | 46 dB |
Dynamic range | 52 dB |


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