CNY65B Photo-transistor Output Optocoupler IC DIP-4 Package
The CNY65 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for the highest safety requirements of > 3 mm.
SKU:
RW-02259
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The CNY65 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for the highest safety requirements of > 3 mm.
Features:-
? Rated recurring peak voltage (repetitive) VIORM = 1450 Vpeak
? Thickness through insulation 3 mm
? Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI 200
? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Specification:-
Parameter
Value
Package / Case
DIP-4
Length
17.8 mm
Width
9.6 mm
Height
6.1 mm
Collector-Emitter Breakdown Voltage
32 V
Configuration
1 Channel
Current Transfer Ratio
100 % to 200 %
Description/Function
Optocoupler, Phototransistor Output, Very High Isolation Voltage
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